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MODIFICATION OF THE JUNCTION PARAMETERS VIA AL DOPING IN AG/CDS:AL THIN-FILM SCHOTTKY DIODES FOR MICROWAVE SENSORS

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dc.creatorARTURO FELIPE FERNÁNDEZ PÉREZ
dc.creatorGERARDO ANDRÉS CABELLO GUZMÁN
dc.creatorWILLIAM ARNOLDO GACITÚA ESCOBAR
dc.creatorERIK BARADIT ALLENDES
dc.date2021
dc.date.accessioned2025-01-10T15:13:32Z
dc.date.available2025-01-10T15:13:32Z
dc.date.issued2021
dc.description.abstractIN THIS ARTICLE, IT IS INVESTIGATED THE EFFECT OF AL DOPING IN THE JUNCTION PARAMETERS OF AG/CDS:AL THIN-FILM SCHOTTKY DIODES AND THEIR ELECTRICAL RESPONSE TO MICROWAVE IRRADIATION. NANOCRYSTALLINE CDS:AL THIN-FILMS WITH THICKNESSES BETWEEN 109 AND 173 NM WERE PREPARED BY CHEMICAL BATH DEPOSITION AND, SUBSEQUENTLY, AG THIN-FILMS WITH AN AVERAGE THICKNESS OF 102 NM WERE GROWN ON THE CDS:AL USING DC SPUTTERING. THE STRUCTURAL, CHEMICAL, MORPHOLOGICAL AND OPTICAL PROPERTIES OF CDS:AL AND AG FILMS WERE CHARACTERIZED BY X-RAY DIFFRACTION (XRD), SCANNING ELECTRON MICROSCOPE, ATOMIC FORCE MICROSCOPE, ENERGY-DISPERSIVE X-RAY SPECTROSCOPY AND UV-VIS SPECTROPHOTOMETER, RESPECTIVELY. CURRENT-VOLTAGE (I - V) CHARACTERISTICS OF AG/CDS:AL DIODES, WITH DIFFERENT AL CONTENT, WERE OBTAINED AT ROOM TEMPERATURE IN DARK CONDITIONS. XRD STUDIES SHOWS THAT CDS:AL AND AG THIN-FILMS HAVE AN HEXAGONAL AND CUBIC STRUCTURE, RESPECTIVELY. CRYSTALLITE SIZES DECREASES WITH AL CONTENT FOR CDS:AL FILMS AND WERE FOUND TO BE IN THE 15-40 NM RANGE. A DECREASE IN THE INTENSITY OF THE XRD MAIN PEAK OF CDS:AL FILMS IS OBSERVED, CAUSED BY THE INCLUSION OF AMORPHOUS AL2O3 ON THE CDS FILM. IT WAS FOUND THAT BAND GAP OF CDS:AL FILMS INCREASES WITH INCREASING AL CONTENT, FROM 2.28 EV TO 2.40 EV. BASED ON THE I - V CHARACTERISTICS OF THE DIODES, THEIR BARRIER HEIGHT (0), IDEALITY FACTOR N, AND SERIES RESISTANCE R-S WERE CALCULATED, AND IT WAS FOUND THAT THESE VALUES ARE MODIFIED BY INCREASING AL CONTENT IN CDS FILMS, IN THE RANGES: (0): 0.7037-0.8426 EV; N: 3.485-4.213; R-S: 0.54-9.86 M OMEGA. BESIDES, IT WAS STATED THAT AL DOPING CHANGES THE AVERAGE SURFACE ROUGHNESS AND THE ENERGIES OF THE CHARGE NEUTRALITY LEVELS OF CDS:AL FILMS. THE EFFECTS OF PHYSICAL PROPERTIES OF THE FILMS ON THE JUNCTION PARAMETERS OF THE DIODES WERE ALSO DISCUSSED. FINALLY, I - V CHARACTERISTICS OF THE AG/CDS:AL DIODES WERE STUDIED UNDER X-BAND MICROWAVE IRRADIATION AT ROOM TEMPERATURE IN DARK CONDITIONS. FOR A SPECIFIC AL DOPING VA
dc.formatapplication/pdf
dc.identifier.doi10.1088/2053-1591/abdc51
dc.identifier.issn2053-1591
dc.identifier.urihttps://repositorio.ubiobio.cl/handle/123456789/11007
dc.languagespa
dc.publisherMATERIAL RESEARCH EXPRESS
dc.relation.uri10.1088/2053-1591/abdc51
dc.rightsPUBLICADA
dc.titleMODIFICATION OF THE JUNCTION PARAMETERS VIA AL DOPING IN AG/CDS:AL THIN-FILM SCHOTTKY DIODES FOR MICROWAVE SENSORS
dc.title.alternativeMODIFICACIÓN DE LOS PARÁMETROS DE UNIÓN MEDIANTE DOPAJE AL EN DIODOS SCHOTTKY DE PELÍCULA DELGADA AG/CDS:AL PARA SENSORES DE MICROONDAS
dc.typeARTÍCULO
dspace.entity.typePublication
ubb.EstadoPUBLICADA
ubb.Otra ReparticionDEPARTAMENTO DE FISICA
ubb.Otra ReparticionDEPARTAMENTO DE CIENCIAS BASICAS
ubb.Otra ReparticionDEPARTAMENTO DE INGENIERIA EN MADERAS
ubb.Otra ReparticionDEPARTAMENTO DE FISICA
ubb.SedeCONCEPCIÓN
ubb.SedeCHILLÁN
ubb.SedeCONCEPCIÓN
ubb.SedeCONCEPCIÓN
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